Scaling the Si MOSFET : From Bulk to SO 1 to Bulk
نویسنده
چکیده
Scaling the Si MOSFET is revisited. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to undesirable large junction capacitance and degraded mobility. By studying the scaling of fully depleted SO1 devices, we note the important concept of controlling horizontal leakage through vertical structures. Several structural variations of conventional SO1 structures are discussed in terms of a natural length scale to guide the design. The concept of Vertical Doping Engineering can also be realized in bulk Si to obtain good subthreshold characteristics without large junction capacitance or heavy channel doping.
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The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circuit cost and functionality, generating a new paradigm shift towards mobile computing. However, as the MOSFET dimensions are scaled below 30nm, electrostatic integrity and device variability become harder to control, degrading circuit performance. In order to overcome these issues, device engineers ...
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